KDD3670 Просмотр технического описания (PDF) - TY Semiconductor

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Компоненты Описание

производитель

KDD3670

100V N-Channel PowerTrench MOSFET

TY Semiconductor 

SMD Type

TransistIoCrs

Product specification

KDD3670

Electrical Characteristics Ta = 25

Parameter

Single Pulse Drain-Source Avalanche Energy

Maximum Drain-Source Avalanche Current

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

Gate-Body Leakage, Forward

Gate-Body Leakage, Reverse

Gate Threshold Voltage

Gate Threshold Voltage Temperature

Coefficient

Static Drain-Source On-Resistance

On-State Drain Current

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Maximum Continuous Drain-Source Diode

Forward Current

Drain-Source Diode Forward Voltage

Symbol

WDSS

IAR

BVDSS

Testconditons

VDD = 50 V, ID = 7.3A (Not 2)

( Not 2)

VGS = 0 V, ID = 250 A

ID = 250 A, Referenced to 25

IDSS

IGSSF

IGSSR

VGS(th)

VDS = 80 V, VGS = 0 V

VGS = 20 V, VDS = 0 V

VGS = -20 V, VDS = 0 V

VDS = VGS, ID = 250 A

Min Typ Max Unit

360 mJ

7.3 A

100

V

92

mV/

1

A

100 nA

-100 nA

2 2.5 4

V

ID = 250 A, Referenced to 25

-7.2

mV/

VGS = 10 V, ID = 7.3 A

22 32

RDS(on) VGS = 10 V, ID = 7.3 A,TJ = 125

39 56 m

VGS = 6 V, ID =7 A,

24 35

ID(on) VGS = 10 V, VDS = 5 V

25

A

gFS

VDS = 5 V, ID = 7.3 A

15 31

S

Ciss

2490

pF

Coss

VDS = 50 V, VGS = 0 V,f = 1.0 MHz

265

pF

Crss

80

pF

td(on)

16 26 ns

tr

td(off)

VDD = 30 V, ID = 1 A,VGS = 10 V, RGEN

=6

10 18 ns

56 84 ns

tf

25 40 ns

Qg

Qgs

VDS = 50 V, ID = 7.3 A,VGS = 10 V

(Note 2)

Qgd

57 80 nC

11

nC

15

nC

IS

2.7 A

VSD

VGS = 0 V, IS = 2.7 A (Not 2)

0.72 1.2 V

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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