KF4N65P/F Просмотр технического описания (PDF) - KEC
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KF4N65P/F Datasheet PDF : 7 Pages
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KF4N65P/F
ELECTRICAL CHARACTERISTICS (Tc=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Static
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
BVDSS
ID=250μA, VGS=0V
ΔBVDSS/ΔTj ID=250μA, Referenced to 25℃
IDSS
VDS=650V, VGS=0V,
Vth
VDS=VGS, ID=250μA
IGSS
VGS=±30V, VDS=0V
RDS(ON)
VGS=10V, ID=1.8A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode Ratings
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS=520V, ID=3.6A
VGS=10V
(Note4,5)
VDD=325V
ID=3.6A
RG=25Ω
(Note4,5)
VDS=25V, VGS=0V, f=1.0MHz
Continuous Source Current
Pulsed Source Current
IS
VGS<Vth
ISP
Diode Forward Voltage
VSD
IS=3.6A, VGS=0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IS=3.6A, VGS=0V,
Qrr
dIs/dt=100A/μs
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =15mH, IS=3.6A, VDD=50V, RG=25Ω, Starting Tj=25℃.
Note 3) IS≤7.0A, dI/dt≤200A/㎲, VDD≤BVDSS, Starting Tj=25℃.
Note 4) Pulse Test : Pulse width ≤ 300㎲, Duty Cycle ≤ 2%.
Note 5) Essentially independent of operating temperature.
MIN. TYP. MAX. UNIT
650
-
-
V
-
0.65
-
V/℃
-
-
10
μA
2.5
-
4.5
V
-
- ±100 nA
-
2.1
2.5
Ω
-
12
-
-
2.5
-
nC
-
5.0
-
-
20
-
-
15
-
ns
-
45
-
-
15
-
-
510
-
-
60
-
pF
-
6.5
-
-
-
3.6
A
-
-
14.4
-
-
1.4
V
-
350
-
ns
-
2.1
-
μC
Marking
1
1
KF4N65
KF4N65
P
701
2
F
713
2
1 PRODUCT NAME
2 LOT NO
2011. 6. 21
Revision No : 0
2/7
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