KF3N60D(2010) Просмотр технического описания (PDF) - KEC
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KF3N60D Datasheet PDF : 6 Pages
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SEMICONDUCTOR
TECHNICAL DATA
KF3N60D/I
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
·VDSS= 600V, ID= 2.3A
·Drain-Source ON Resistance : RDS(ON)=3.3Ω @VGS = 10V
·Qg(typ) = 8.5nC
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
SYMBOL
RATING
UNIT
KF3N60D
A
C
D
B
H
J
E
G
FF
K
L
N
M
DIM MILLIMETERS
A 6.60 +_ 0.20
B 6.10 +_0.20
C 5.34 +_ 0.30
D 0.70 +_0.20
E 2.70 +_ 0.15
F 2.30 +_0.10
G 0.96 MAX
H 0.90 MAX
J 1.80 +_0.20
K 2.30 +_0.10
L 0.50 +_ 0.10
M 0.50 +_0.10
N 0.70 MIN
1
2
3
1. GATE
2. DRAIN
3. SOURCE
Drain-Source Voltage
VDSS
600
Gate-Source Voltage
VGSS
±30
@TC=25℃
2.3
ID
Drain Current @TC=100℃
1.46
Pulsed (Note1)
IDP
7*
Single Pulsed Avalanche Energy
(Note 2)
EAS
120
Repetitive Avalanche Energy
(Note 1)
EAR
3.2
Peak Diode Recovery dv/dt
(Note 3)
dv/dt
4.5
Drain Power
Dissipation
Tc=25℃
PD
Derate above 25℃
73
0.58
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55～150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC
2.8
Thermal Resistance, Junction-to-
Ambient
RthJA
62.5
* : Drain current limited by maximum junction temperature.
V
V
A
mJ
mJ
V/ns
W
W/℃
℃
℃
℃/W
℃/W
A
C
M
N
G
FF
123
DPAK (1)
KF3N60I
H
J
P
L
DIM MILLIMETERS
A
6.6 +_ 0.2
B
6.1 +_ 0.2
C
5.34 +_0.3
D
0.7 +_ 0.2
E
9.3 +_0.3
F
2.3+_ 0.2
G
0.76 +_ 0.1
H
2.3 +_ 0.1
J
0.5+_ 0.1
K
1.8 +_ 0.2
L
0.5 +_ 0.1
M
1.0 +_ 0.1
N 0.96 MAX
P
1.02 +_ 0.3
1. GATE
2. DRAIN
3. SOURCE
PIN CONNECTION
D
IPAK(1)
G
S
2010. 12. 20
Revision No : 0
1/6
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