KF3N40I Просмотр технического описания (PDF) - KEC
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KF3N40I Datasheet PDF : 6 Pages
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SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for LED Lighting and
switching mode power supplies.
FEATURES
·VDSS(Min.)= 400V, ID= 2.2A
·Drain-Source ON Resistance : RDS(ON)=3.4 Ω(max) @VGS =10V
·Qg(typ.) =4.4nC
MAXIMUM RATING (Tc=25℃)
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
@TC=25℃
ID
Drain Current
@TC=100℃
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
TC=25℃
Derate above25℃
IDP
EAS
EAR
dv/dt
PD
Maximum Junction Temperature
Tj
Storage Temperature Range
Tstg
Thermal Characteristics
RATING
400
±30
2.2
1.4
6*
52
3
4.5
40
0.32
150
-55～150
Thermal Resistance, Junction-to-Case RthJC
3.1
Thermal Resistance, Junction-to-
Ambient
RthJA
110
* : Drain current limited by maximum junction temperature.
UNIT
V
V
A
mJ
mJ
V/ns
W
W/℃
℃
℃
℃/W
℃/W
KF3N40D/I
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KF3N40D
A
C
D
B
H
G
FF
J
E
K
L
N
M
DIM MILLIMETERS
A 6.60 +_ 0.20
B 6.10 +_0.20
C 5.34 +_ 0.30
D 0.70 +_ 0.20
E 2.70 +_ 0.15
F
2.30 +_ 0.10
G 0.96 MAX
H 0.90 MAX
J
1.80 +_0.20
K 2.30 +_0.10
L 0.50 +_ 0.10
M 0.50 +_0.10
N 0.70 MIN
O
0.1 MAX
1
2
3
O
1. GATE
2. DRAIN
3. SOURCE
DPAK (1)
KF3N40I
A
H
C
J
M
N
G
FF
123
P
L
1. GATE
2. DRAIN
3. SOURCE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
MILLIMETERS
6.6 +_ 0.2
6.1 +_ 0.2
5.34 +_0.3
0.7 +_ 0.2
9.3 +_0.3
2.3+_ 0.2
0.76 +_ 0.1
2.3 +_ 0.1
0.5+_ 0.1
1.8 +_ 0.2
0.5 +_ 0.1
1.0 +_ 0.1
0.96 MAX
1.02 +_ 0.3
PIN CONNECTION
D
IPAK(1)
G
S
2010. 8. 23
Revision No : 0
1/6
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