KF13N50P Просмотр технического описания (PDF) - VBsemi Electronics Co.,Ltd
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KF13N50P Datasheet PDF : 8 Pages
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KF13N50P
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
www.VBsemi.tw
60
TOP 15 V
14 V
13 V
50
12 V
11 V
10 V
9V
8V
40
7V
6V
5V
30
TJ = 25 °C
20
10
0
0
5
10
15
20
25
30
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
40
TOP 15 V
14 V
13 V
12 V
11 V
30
10 V
9V
8V
7V
6V
5V
20
TJ = 150 °C
10
0
0
5
10 15 20 25 30
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
60
50
40
30
TJ = 150 °C
20
10
0
0
TJ = 25 °C
VDS = 29.6 V
5
10
15
20
25
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
ID = 11 A
2.5
2
1.5
1
VGS = 10 V
0.5
0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
4800
3600
2400
1200
Ciss
ġġ
Coss
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
ġġ
Crss
ġ
0
0
100 200 300 400 500 600
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
5000
500
50
0
14
12
10
Coss
8
Eoss
6
4
2
100 200 300 400 500
VDS
Fig. 6 - Coss and Eoss vs. VDS
0
600
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3
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