LR3410 Просмотр технического описания (PDF) - VBsemi Electronics Co.,Ltd

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LR3410

N-Channel 100 V (D-S) MOSFET

VBsemi Electronics Co.,Ltd 

LR3410

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

0.3

100

0.25

VGS = 10 V

ID = 5 A

www.VBsemi.tw

0.2

0.15

TJ = 150 °C

10

0.1

0.05

TJ = 25 °C

0.0

- 50 - 25 0 25 50 75 100 125 150 175

TJ - Junction Temperature (°C)

On-Resistance vs. Junction Temperature

THERMAL RATINGS

7

6

5

4

3

1

0

0.3

0.6

0.9

1.2

VSD - Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

10

Limited by RDS(on)*

5

1

TC = 25 °C

Single Pulse

10 µs

100 µs

1 ms

10 ms

100 ms

1 s, DC

0

0

25 50 75 100 125 150 175

TC - Case Temperature (°C)

Maximum Avalanche Drain Current

vs. Case Temperature

2

1

Duty Cycle = 0.5

0.1

0.1

1

10

100

1000

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

Safe Operating Area

0.2

0.1

0.1

0.05

0.02

Single Pulse

0.01

10- 4

10- 3

10- 2

10- 1

1

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Case

10

30

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