CEU02N9 Просмотр технического описания (PDF) - Unspecified
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CEU02N9 Datasheet PDF : 5 Pages
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RƟJA Thermal Resistance Junction to mbient
CEU02N9
110
℃/W
Electrical Characteristics：(TA=25℃ unless otherwise noted)
Symbol
Off Characteristics
BVDSS
Parameter
Drain-Sourtce Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Source Leakage Current
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
RDS(ON)
Drain-Source On Resistance
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain “Miller” Charge
Drain-Source Diode Characteristics
Conditions
Min Typ Max Units
VGS=0V,ID=250μA
VGS=0V, VDS=900V
VDS=720V,TJ=125℃
VGS=±30V, VDS=0A
900
---
---
V
---
---
10
μA
---
---
100 μA
---
--- ±100 nA
VGS=VDS, ID=250μA
VGS=10V,ID=1A
3
---
5
V
---
4.2
6
Ω
---
705
---
VDS=25V, VGS=0V, f=1MHz
---
43
---
pF
---
4.8
---
VDD=450V,ID=2A,
RG=25Ω(Note 3,4)
VGS=10V, VDS=720V,
ID=2A(Note 3,4)
---
15
40
ns
---
35
80
ns
---
20
50
ns
---
30
70
ns
---
12
15
nC
---
2.8
---
nC
---
6.1
---
nC
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