CEP60N10 Просмотр технического описания (PDF) - Thinki Semiconductor Co., Ltd.
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CEP60N10 Datasheet PDF : 5 Pages
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CEP60N10
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
Gate Threshold Voltage
Static Drain-Source
On-Resistance
BVDSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
VGS = 0V, ID = 250µA
100
VDS = 80V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
VGS = VDS, ID = 250µA
2
VGS = 10V, ID = 30A
Forwand Transconductance
Dynamic Characteristics c
gFS
VDS = 15V, ID = 30A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 50V, ID = 30A,
VGS = 10V, RGEN = 2.5Ω
Turn-On Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 80V, ID = 30A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
IS
Drain-Source Diode Forward Voltage b
VSD
VGS = 0V, IS = 60A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 700µH, IAS = 46A, VDD = 25V, RG = 25Ω, Starting TJ = 25 C
Typ
19
26
1620
670
240
19
17
40
13
65
19
23
Max Units
V
1
µA
100 nA
-100 nA
4
V
23.5 mΩ
S
pF
pF
pF
28
ns
34
ns
80
ns
26
ns
84
nC
nC
nC
60
A
1.3
V
Rev.09T
© 1995 Thinki Semiconductor Co., Ltd.
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