CEP60N10 Просмотр технического описания (PDF) - Thinki Semiconductor Co., Ltd.
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CEP60N10 Datasheet PDF : 5 Pages
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CEP60N10
Pb Free Plating Product
CEP60N10
Pb
60A,100V Heatsink Planar N-Channel Power MOSFET
Features
• 60A, 100V, RDS(on) = 0.0235 Ω @VGS = 10 V
• Low gate charge ( typical 65 nC)
• Low Crss ( typical 240 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
1. Gate {
{ 2. Drain
●
◀▲
●
●
{ 3. Source
General Description
This N-channel enhancement mode field-effect power transistor
using THINKI Semiconductor advanced planar stripe, DMOS technol-
ogy intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged
avalanche characteristics. The TO-220C pkg is well suited for
adaptor power units,amplifiers,inverters and SMPS application.
BVDSS = 100V
RDS(ON) = 0.0235 ohm
ID = 60A
TO-220C
G DS
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed a
IDM
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
PD
100
±20
60
240
200
1.3
Single Pulsed Avalanche Energy d
Single Pulsed Avalanche Current d
Operating and Store Temperature Range
EAS
IAS
TJ,Tstg
148
46
-55 to 175
Units
V
V
A
A
W
W/ C
mJ
A
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
0.75
62.5
Units
C/W
C/W
Rev.09T
© 1995 Thinki Semiconductor Co., Ltd.
Page 1/5
http://www.thinkisemi.com.tw/
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