P-CHANNEL
10
-VGS=10,8V
8
-VGS=6V
6
-VGS=5V
4
2
0
0
1
2
3
4
5
6
-VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
1200
1000
Ciss
800
600
400
200
Coss
Crss
0
0
6
12
18
24
30
-VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3
VDS=VGS
1.2 ID=-250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
5
CEM6659
10
8
25 C
6
4
2
TJ=125 C
-55 C
0
0
1
2
3
4
5
6
-VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2.2
ID=-3.1A
1.9 VGS=-10V
1.6
1.3
1.0
0.7
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
VGS=0V
101
100
10-1
0.4 0.6 0.8 1.0 1.2 1.4
-VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current