HUML2020L3 Просмотр технического описания (PDF) - ROHM Semiconductor
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HUML2020L3 Datasheet PDF : 9 Pages
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2SCR567F3
NPN 2.5A 120V Middle Power Transistor
Parameter
VCEO
IC
Value
120V
2.5A
lFeatures
1) Suitable for Middle Power Driver.
2) Low VCE(sat)
VCE(sat)=200mV(Max.).
(IC/IB=800mA/80mA)
3) High collector current.
IC=2.5A(max),ICP=5A(max)
4) Leadless small SMD package (HUML2020L3)
Excellent thermal and electrical conductivity.
lOutline
DFN2020-3S
HUML2020L3
lInner circuit
Datasheet
lApplication
LOW FREQUENCY AMPLIFIER
lPackaging specifications
Part No.
Package
Taping Reel size Tape width Quantity
code (mm) (mm) (pcs)
2SCR567F3
DFN2020-3S
(HUML2020L3)
TR
180
8
3000
Marking
NK
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20200731 - Rev.002
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