STW8A12D-E3 Просмотр технического описания (PDF) - SEOUL SEMICONDUCTOR

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производитель

STW8A12D-E3

Mid-Power LED

SEOUL SEMICONDUCTOR 

Performance Characteristics

Product Data Sheet

STW8A12D-E3 – Mid-Power LED

Table 3. Characteristics, IF=65mA, Tj= 25ºC, RH30%

Parameter

Forward Current

Forward Voltage

Luminous Intensity[1] (5,000K)[2]

CRI [3]

Viewing Angle

Storage Temperature

Thermal resistance (J to S) [4]

ESD Sensitivity(HBM)

Symbol

IF

VF

Iv

Ra

2Θ1/2

Tstg

RθJ-S

-

Min.

-

-

-

80

-

- 40

-

Value

Unit

Typ.

Max.

65

-

mA

2.8

3.1

V

11.5

-

cd

83

90

120

-

Deg.

-

+ 85

ºC

15

-

℃/W

Class 2 JESD22-A114-E

Table 4. Absolute Maximum Ratings

Parameter

Forward Current

Power Dissipation

Junction Temperature

Operating Temperature

Storage Temperature

Symbol

IF

PD

Tj

Topr

Tstg

Value

200

0.7

125

-40 ~ + 85

-40 ~ + 100

Unit

mA

W

ºC

ºC

ºC

Notes :

(1) Seoul Semiconductor maintains a tolerance of 7% on Intensity and power measurements.

(2) Correlated Color Temperature is derived from the CIE 1931 Chromaticity diagram.

Color coordinate : 0.005, CCT 5% tolerance.

(3) Tolerance is 2.0 on CRI ,  0.1 on VF measurements.

(4) Thermal resistance is junction to Solder.

(5) IFP conditions with pulse width ≤10ms and duty cycle ≤10%

(6) The products are sensitive to static electricity and must be carefully taken when handling products

(7) It is recommended to use it in the condition that the reliability is secured within the Max value.

• Calculated performance values are for reference only.

• All measurements were made under the standardized environment of Seoul Semiconductor.

Rev1.6, Aug 24, 2020

4

www.seoulsemicon.com

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