STW8C12C-E0 Просмотр технического описания (PDF) - SEOUL SEMICONDUCTOR
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STW8C12C-E0 Datasheet PDF : 30 Pages
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Performance Characteristics
Product Data Sheet
STW8C12C-E0 – Mid-Power LED
Table 3. Characteristics, IF=65mA, Tj= 25ºC, RH30%
Parameter
Forward Current
Forward Voltage[1]
CRI[1]
Viewing Angle [2]
Thermal resistance (J to S) [3]
Turn-on voltage
ESD Sensitivity(HBM) [4]
Symbol
IF
VF
Ra
2Θ1/2
RθJ-S
VF (1uA)
-
Min.
-
2.6
80
-
-
1.9
Value
Typ.
Max.[6]
Unit
65
-
mA
2.7
2.9
V
90
120
-
Deg.
7.5
℃/W
-
2.7
V
Class 3A JEDEC JS-001-2017
Table 4. Absolute Maximum Ratings[6]
Parameter
Symbol
Value
Unit
Forward Current
Power Dissipation
Junction Temperature[5]
Operating Temperature
Storage Temperature
IF
200
mA
PD
0.6
W
Tj
125
ºC
Topr
-40 ~ + 85
ºC
Tstg
-40 ~ + 100
ºC
Notes :
[1] Tolerance : VF :± 0.1V, Flux :± 7%, Ra :± 2, x,y :± 0.005, R9 : ± 6
[2] 2Θ1/2 is the off-axis where the luminous intensity is 1/2 of the peak intensity.
[3] Thermal resistance : RthJS (Junction / solder)
[4] A zener diode is included for ESD Protection.
[5] TJ=TS + RθJ-S*P
TJ [℃] = LED Junction Temperature
TS [℃] = LED Solder Temperature
P [W] = IF *VF
[6] It is recommended to use it in the condition that the reliability is secured within the Max value.
- Calculated performance values are for reference only
- All measurements were made under the standardized environment of seoul semiconductor
• LED’s properties might be different from suggested values like above and below tables if operation
condition will be exceeded our parameter range. Care is to be taken that power dissipation does not
exceed the absolute maximum rating of the product.
• Thermal resistance can be increased substantially depending on the heat sink design/operating
condition, and the maximum possible driving current will decrease accordingly.
• All measurements were made under the standardized environment of Seoul Semiconductor.
Rev 2.5, Oct, 2020
4
www.seoulsemicon.com
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