SI4214DDY-T1-E3 Просмотр технического описания (PDF) - VBsemi Electronics Co.,Ltd
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SI4214DDY-T1-E3 Datasheet PDF : 9 Pages
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SI4214DDY-T1-E3
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
40
10
32
VGS = 10 V thru 4 V
8
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24
VGS = 3 V
16
8
0
0.0
0.5
1.0
1.5
2.0
2.5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.030
0.026
0.022
0.018
VGS = 4.5 V
0.014
VGS = 10 V
0.010
0
10
20
30
40
50
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
ID = 8 A
8
VDS = 10 V
6
VDS = 20 V
4
VDS = 15 V
2
0
0.0
3.2
6.4
9.6
12.8
16
Qg - Total Gate Charge (nC)
Gate Charge
6
4
TC = 25 °C
2
TC = 125 °C
TC = - 55 °C
0
0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
1000
800
Ciss
600
400
200
Crss
Coss
0
0
6
12
18
24
30
VDS - Drain-to-Source Voltage (V)
Capacitance
1.8
ID = 8 A
1.6
1.4
VGS = 10 V
1.2
VGS = 4.5 V
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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