SI4174DY-T1-E3 Просмотр технического описания (PDF) - VBsemi Electronics Co.,Ltd
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SI4174DY-T1-E3 Datasheet PDF : 9 Pages
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SI4174DY-T1-E3
N-Channel 30-V (D-S) MOSFET
www.VBsemi.tw
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30
0.004 at VGS = 10 V
0.005 at VGS = 4.5 V
ID (A)a
18
16
Qg (Typ.)
6.8 nC
FEATURES
• Halogen-free
• TrenchFET® Power MOSFET
• Optimized for High-Side Synchronous
Rectifier Operation
• 100 % Rg Tested
• 100 % UIS Tested
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
APPLICATIONS
• Notebook CPU Core
- High-Side Switch
D
G
Top View
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
30
VGS
± 20
V
TC = 25 °C
18
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
16
15b, c
Pulsed Drain Current
TA = 70 °C
IDM
13b, c
50
A
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
3.8
2.1b, c
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
IAS
22
EAS
24
mJ
TC = 25 °C
4.5
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
2.8
2.5b, c
W
TA = 70 °C
1.6b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Notes:
a. Base on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Symbol
RthJA
RthJF
Typical
38
22
Maximum
50
28
Unit
°C/W
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