BC847S Просмотр технического описания (PDF) - Secos Corporation.
Номер в каталоге
Компоненты Описание
производитель
BC847S Datasheet PDF : 3 Pages
| |||
Elektronische Bauelemente
BC847S
NPN Silicon
Multi-Chip Transistor
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
1200
1000
125 °C
V CE = 5.0 V
800
600
25 °C
400
- 40 °C
200
0
0.01 0.03 0.1 0.3 1 3 10 30 100
I C - COLLECTOR CURRENT (mA)
Collector-Emitter Saturation
Voltage vs Collector Current
0.3
0.25 β = 10
0.2
0.15
0.1
0.05
25 °C
125 °C
- 40 °C
0.1
1
10
100
I C - COLLECTOR CURRENT (mA)
Base-Emitter Saturation
Voltage vs Collector Current
1
- 40 °C
0.8
0.6
0.4
0.2
0.1
25 °C
125 °C
β = 10
1
10
100
I C - COLLECTOR CURRENT (mA)
Base-Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
0.1
- 40 °C
25 °C
125 °C
V CE = 5.0 V
1
10
40
I C - COLLECTOR CURRENT (mA)
Contours of Constant Gain
Bandwidth Product (fT )
10
7
175 MHz
5
3
150 MHz
2
125 MHz
100 MHz
75 MHz
1
0.1
1
10
100
I C - COLLECTOR CURRENT (mA)
Normalized Collect or-Cutoff Current
vs Ambient Temperature
1000
100
10
1
25
50
75
100
125
150
TA - AMBIE NT TEMP ERATURE ( °C)
http://www.SeCoSGmbH.com
01-Jan-2006 Rev. B
Any changing of specification will not be informed individual
Page 2 of 3
Share Link: 