S2409 Просмотр технического описания (PDF) - ROHM Semiconductor
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S2409 Datasheet PDF : 13 Pages
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S2409
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance,
energy related
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Turn - on switching loss
Turn - off switching loss
gfs *4
Ciss
Coss
Crss
VDS = 10V, ID = 13A
VGS = 0V
VDS = 800V
f = 1MHz
Co(er)
VGS = 0V
VDS = 0V to 800V
td(on) *4
tr *4
td(off) *4
tf *4
VDD = 500V, ID = 13A
VGS = 18V/0V
RL = 38.5W
RG = 0W
Eon *4,5
Eoff *4,5
VDD = 800V, ID=20A
VGS = 18V/0V
RG = 0W, L=500mH
*Eon includes diode
reverse recovery
Datasheet
Values
Unit
Min. Typ. Max.
-
4.2
-
S
-
2250
-
-
72
-
pF
-
13
-
-
90
-
pF
-
26
-
-
40
-
ns
-
82
-
-
30
-
-
953
-
mJ
-
70
-
lGate Charge characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Total gate charge
Gate - Source charge
Gate - Drain charge
Qg *4
Qgs *4
Qgd *4
VDD = 500V
ID = 13A
VGS = 18V
-
106
-
-
30
-
nC
-
33
-
Gate plateau voltage
V(plateau) VDD = 500V, ID = 13A
-
11
-
V
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3/11
2017.01 - Rev.A
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