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MLD1N06CL

SMARTDISCRETES Internally Clamped, Current Limited N–Channel Logic Level Power MOSFET

Motorola => Freescale 

MLD1N06CL

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage (Internally Clamped)

(ID = 20 mAdc, VGS = 0 Vdc)

(ID = 20 mAdc, VGS = 0 Vdc, TJ = 150°C)

Zero Gate Voltage Drain Current

(VDS = 45 Vdc, VGS = 0 Vdc)

(VDS = 45 Vdc, VGS = 0 Vdc, TJ = 150°C)

Gate–Source Leakage Current

(VG = 5.0 Vdc, VDS = 0 Vdc)

(VG = 5.0 Vdc, VDS = 0 Vdc, TJ = 150°C)

V(BR)DSS

Vdc

59

62

65

59

62

65

IDSS

—

—

µAdc

0.6

5.0

6.0

20

IGSS

—

—

µAdc

0.5

5.0

1.0

20

ON CHARACTERISTICS(1)

Gate Threshold Voltage

(ID = 250 µAdc, VDS = VGS)

(ID = 250 µAdc, VDS = VGS, TJ = 150°C)

Static Drain–to–Source On–Resistance

(ID = 1.0 Adc, VGS = 4.0 Vdc)

(ID = 1.0 Adc, VGS = 5.0 Vdc)

(ID = 1.0 Adc, VGS = 4.0 Vdc, TJ = 150°C)

(ID = 1.0 Adc, VGS = 5.0 Vdc, TJ = 150°C)

Static Source–to–Drain Diode Voltage (IS = 1.0 Adc, VGS = 0 Vdc)

Static Drain Current Limit

(VGS = 5.0 Vdc, VDS = 10 Vdc)

(VGS = 5.0 Vdc, VDS = 10 Vdc, TJ = 150°C)

Forward Transconductance (ID = 1.0 Adc, VDS = 10 Vdc)

RESISTIVE SWITCHING CHARACTERISTICS(2)

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

(VDD = 25 Vdc, ID = 1.0 Adc,

VGS(on) = 5.0 Vdc, RGS = 50 Ohms)

Fall Time

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from drain lead 0.25” from package to center of die)

VGS(th)

1.0

0.6

RDS(on)

—

—

—

—

VSD

—

ID(lim)

2.0

1.1

gFS

1.0

td(on)

—

tr

—

td(off)

—

tf

—

LD

—

Vdc

1.5

2.0

—

1.6

Ohms

0.63

0.75

0.59

0.75

1.1

1.9

1.0

1.8

1.1

1.5

Vdc

Adc

2.3

2.75

1.3

1.8

1.4

—

mhos

1.2

2.0

ns

4.0

6.0

4.0

6.0

3.0

5.0

nH

4.5

—

Internal Source Inductance

LS

nH

(Measured from the source lead 0.25” from package to source bond pad)

—

7.5

—

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

4

TJ = 25°C

4 VDS ≥ 7.5 V

3

10 V

6V

8V

3

4V

2

2

–50°C

25°C

1

VGS = 3 V

1

TJ = 150°C

0

0

2

4

6

8

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

0

0

2

4

6

8

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 1. Output Characteristics

Figure 2. Transfer Function

2

Motorola TMOS Power MOSFET Transistor Device Data

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