VS-12TTS08-M3 Просмотр технического описания (PDF) - Vishay Semiconductors
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VS-12TTS08-M3 Datasheet PDF : 7 Pages
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VS-12TTS08-M3
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
TJ, TStg
RthJC
RthJA
RthCS
DC operation
Mounting surface, smooth and greased
Approximate weight
Mounting torque
Marking device
minimum
maximum
Case style 3L TO-220AB
VALUES
-40 to 125
UNITS
°C
1.5
62
°C/W
0.5
2
g
0.07
oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
12TTS08
125
RthJC (DC) = 1.5 K/W
120
115
Conduction Angle
110
105
100
0
30°
60°
90°
120°
180°
2
4
6
8
10
Average On-State Current (A)
Fig. 1 - Current Ratings Characteristics
10
9
180°
120°
8
90°
60°
7
30°
6
5
RMS Limit
4
3
Conduction Angle
2
TJ = 125 °C
1
0
0123456789
Average On-State Current (A)
Fig. 3 - On-State Power Loss Characteristics
125
RthJC (DC) = 1.5 K/W
120
115
Conduction Period
110
105
100
0
30°
60°
90°
120°
180° DC
24
6 8 10 12 14
Average On-State Current (A)
Fig. 2 - Current Ratings Characteristics
14
DC
12
180°
120°
10
90°
60°
30°
8
6 RMS Limit
4
2
Conduction Period
TJ = 125 °C
0
0
24
6 8 10 12 14
Average On-State Current (A)
Fig. 4 - On-State Power Loss Characteristics
Revision: 21-Aug-17
3
Document Number: 96286
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