VS-12TTS08-M3 Просмотр технического описания (PDF) - Vishay Semiconductors
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VS-12TTS08-M3 Datasheet PDF : 7 Pages
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VS-12TTS08-M3
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
Maximum RMS on-state current
IT(AV)
IT(RMS)
Maximum peak, one-cycle,
non-repetitive surge current
ITSM
Maximum I2t for fusing
Maximum I2t for fusing
Maximum on-state voltage drop
On-state slope resistance
Threshold voltage
Maximum reverse and direct leakage
current
Typical holding current
Maximum latching current
Maximum rate of rise of off-state voltage
Maximum rate of rise of turned-on current
I2t
I2t
VTM
rt
VT(TO)
IRM/IDM
IH
IL
dV/dt
dI/dt
TEST CONDITIONS
VALUES
8
TC = 108 °C, 180° conduction, half sine wave
12.5
10 ms sine pulse, rated VRRM applied, TJ = 125 °C
95
10 ms sine pulse, no voltage reapplied, TJ = 125 °C
110
10 ms sine pulse, rated VRRM applied, TJ = 125 °C
45
10 ms sine pulse, no voltage reapplied, TJ = 125 °C
64
t = 0.1 ms to 10 ms, no voltage reapplied, TJ = 125 °C 640
8 A, TJ = 25 °C
1.2
16.2
TJ = 125 °C
0.87
TJ = 25 °C
TJ = 125 °C
VR = Rated VRRM/VDRM
Anode supply = 6 V, resistive load, initial IT = 1 A,
TJ = 25 °C
Anode supply = 6 V, resistive load, TJ = 25 °C
TJ = TJ max., linear to 80 °C, VDRM = Rg - k = Open
0.05
1.0
30
50
150
100
UNITS
A
A2s
A2s
V
m
V
mA
V/μs
A/μs
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
Maximum required DC gate current to
trigger
Maximum required DC gate
voltage to trigger
Maximum DC gate voltage not to trigger
Maximum DC gate current not to trigger
SYMBOL
PGM
PG(AV)
+ IGM
- VGM
IGT
VGT
VGD
IGD
TEST CONDITIONS
Anode supply = 6 V, resistive load, TJ = - 65 °C
Anode supply = 6 V, resistive load, TJ = 25 °C
Anode supply = 6 V, resistive load, TJ = 125 °C
Anode supply = 6 V, resistive load, TJ = - 65 °C
Anode supply = 6 V, resistive load, TJ = 25 °C
Anode supply = 6 V, resistive load, TJ = 125 °C
TJ = 125 °C, VDRM = Rated value
SWITCHING
PARAMETER
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
SYMBOL
tgt
trr
tq
TJ = 25 °C
TEST CONDITIONS
TJ = 125 °C
VALUES
8.0
2.0
1.5
10
20
15
10
1.2
1
0.7
0.2
0.1
UNITS
W
A
V
mA
V
mA
VALUES
0.8
3
100
UNITS
μs
Revision: 21-Aug-17
2
Document Number: 96286
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