SI3454ADV-T1-GE3 Просмотр технического описания (PDF) - Vishay Semiconductors
Номер в каталоге
Компоненты Описание
производитель
SI3454ADV-T1-GE3 Datasheet PDF : 5 Pages
| |||
Si3454ADV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.20
600
0.15
500
Ciss
400
0.10
0.05
VGS = 4.5 V
VGS = 10 V
0.00
0
4
8
12
16
20
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
VDS = 15 V
ID = 4.5 A
8
6
4
2
300
200
Coss
100
Crss
0
0
6
12
18
24
30
VDS - Drain-to-Source Voltage (V)
Capacitance
1.8
VGS = 10 V
ID = 4.5 A
1.6
1.4
1.2
1.0
0.8
0
0
2
4
6
8
10
Qg - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
20
TJ = 150 °C
10
0.20
0.15
ID = 4.5 A
0.10
TJ = 25 °C
0.05
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Document Number: 71108
S09-0765-Rev. D, 04-May-09
0.00
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
www.vishay.com
3
Share Link: 