ISC184 Просмотр технического описания (PDF) - Inchange Semiconductor

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ISC184

Silicon NPN Power Transistor

Inchange Semiconductor 

isc Silicon NPN Power Transistor

INCHANGE Semiconductor

ISC184

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC=0.1A ; IB= 0

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1.5 A; IB= 0.15A

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB= 1A

VBE(on) Base-Emitter On Voltage

IC= 1.5A; VCE= 2V

ICBO

Collector Cutoff Current

VCB=80V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

hFE-1

DC Current Gain

IC= 1.5A ; VCE= 2V

hFE-2

DC Current Gain

IC= 4A ; VCE= 2V

MIN TYP. MAX UNIT

80

V

0.6

V

1.4

V

1.2

V

0.1 mA

1.0 mA

20

80

7

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