HYC3N1280NO00AA1AA Просмотр технического описания (PDF) - Infineon Technologies

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Компоненты Описание

производитель

HYC3N1280NO00AA1AA

MEMORY SPECTRUM

Infineon Technologies 

DRAM Components

Nomenclature DRAM Components

HYB 25 D 128 80 0 C T

- 6 (Example)

Speed/Performance 3 = DDR2-667 4-4-4

3.7 = DDR2-533 4-4-4

5 = DDR2-400 3-3-3/DDR400B 3-3-3

6 = DDR333 2.5-3-3/PC166 3-3-3

7 = DDR266A 2-3-3/PC133 2-2-2

7F = DDR266 2-2-2

7.5 = DDR266B 2.5-3-3/PC133 3-3-3

8 = DDR200 2-2-2/PC100 2-2-2

(DDR2)

(DDR2)

(DDR2 / DDR)

(DDR / SDR)

(DDR / SDR)

(DDR)

(DDR / SDR)

(DDR / SDR)

Power

none = Standard Power

L = Low-Power Product

Package

C = FBGA

T = TSOP 400 mil

E = TSOP 400 mil

F = FBGA

G = TSOP stack

Contains Lead

Contains Lead

Lead and Halogen-Free (ROHS*-compliant)

Lead and Halogen-Free (ROHS*-compliant)

Lead and Halogen-Free (ROHS*-compliant)

Product Revision

Die Revision

Product Variation

0 = Standard Product

Organization

40 = x 4

80 = x 8

16 = x 16

Memory Density

128 =

256 =

512 =

1G =

128 Mb

256 Mb

512 Mb

1024 Mb

Memory Type

S = SDR

Single Data Rate SDRAM

D = DDR Double Data Rate SDRAM

T = DDR2 Double Data Rate 2 SDRAM

Supply Voltage

39 = 3.3 V

25 = 2.5 V

18 = 1.8 V

Prefix

HYB = Memory Components

* ROHS = Restriction Of Hazardous Substances

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