MT28F321P20FG-70B Просмотр технического описания (PDF) - Micron Technology

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Компоненты Описание

производитель

MT28F321P20FG-70B

FLASH MEMORY

Micron Technology 

PRELIMINARY

2 MEG x 16

PAGE FLASH MEMORY

BALL DESCRIPTIONS

48-BALL FBGA

NUMBERS

D8, C8, B8, C7,

A8, B7, C6, A7,

A3, C3, B2, A2,

C2, A1, B1, C1,

D1, B6, B5, A6,

C5

D7

SYMBOL

A0–A20

CE#

TYPE

Input

Input

F8

OE#

Input

B3

WE#

Input

B4

RST#

Input

A5

WP#

Input

A4

VPP

Input

E7, F7, D5, B5,

F4, D3, E3, F2,

D6, 36, F6, D4,

E4, F3, D2, E2

E8, F1

F5

DQ0–DQ15

VSS

VCC

Input/

Output

Supply

Supply

E1

VCCQ

Supply

C4

NC

–

DESCRIPTION

Address Inputs: Inputs for the address during READ and WRITE

operations. Addresses are internally latched during READ and WRITE

cycles.

Chip Enable: Activates the device when LOW. When CE# is HIGH, the

device is disabled and goes into standby power mode.

Output Enable: Enables the output buffer when LOW. When OE# is

HIGH, the output buffers are disabled.

Write Enable: Determines if a given cycle is a WRITE cycle. If WE# is

LOW, the cycle is either a WRITE to the command state machine

(CSM) or to the memory array.

Reset: When RST# is a logic LOW, the device is in reset mode, which

drives the outputs to High-Z and resets the write state machine

(WSM). When RST# is at logic HIGH, the device is in standard

operation. When RST# transitions from logic LOW to logic HIGH, the

device resets all blocks to locked and defaults to the read array

mode.

Write Protect: Controls the lock down function of the flexible locking

feature.

Program/Erase Enable: [0.9V–2.2V or 11.4V–12.6V] Operates as input

at logic levels to control complete device protection. Provides factory

programming compatibility when driven to 11.4V–12.6V.

Data Inputs/Outputs: Input array data on the second CE# and WE#

cycle during PROGRAM command. Input commands to the

command user interface when CE# and WE# are active. DQ0–DQ15

output data when CE# and OE# are active.

Do not float any ground ball.

Device Power Supply: [1.70V–1.90V (MT28F321P18) or 1.80V–2.20V

(MT28F321P20)] Supplies power for device operation.

I/O Power Supply: [1.70V–1.90V (MT28F321P18) or 1.80V–2.20V

(MT28F321P20)] Supplies power for input/output buffers.

Internally not connected.

2 Meg x 16 Page Flash Memory

MT28F321P20_3.p65 – Rev. 3, Pub. 7/02

7

Micron Technology, Inc., reserves the right to change products or specifications without notice.

©2002, Micron Technology, Inc.

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