MT28F321P20FG-70B Просмотр технического описания (PDF) - Micron Technology

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MT28F321P20FG-70B

FLASH MEMORY

Micron Technology 

GENERAL DESCRIPTION

The MT28F321P20 and MT28F321P18 are high-

performance, high-density, nonvolatile memory

solutions that can significantly improve system perfor-

mance. This new architecture features a two-memory-

bank configuration that supports background

operation with no latency.

A high-performance bus interface allows a fast page

mode, data transfer; a conventional asynchronous bus

interface is provided as well.

The devices allow soft protection for blocks, as read

only, by configuring soft protection registers with dedi-

cated command sequences. For security purposes, two

64-bit chip protection registers are provided.

The embedded WORD WRITE and BLOCK ERASE

functions are fully automated by an on-chip write state

machine (WSM). Two on-chip status registers, one for

each of the two memory partitions, can be used to moni-

tor the WSM status and to determine the progress of

the program/erase task.

The erase/program suspend functionality allows

compatibility with existing EEPROM emulation soft-

ware packages.

The device is manufactured using 0.18µm process

technology.

Please refer to Micron’s Web site (www.micron.com/

flash) for the latest data sheet.

PRELIMINARY

2 MEG x 16

PAGE FLASH MEMORY

ARCHITECTURE AND MEMORY

ORGANIZATION

The Flash devices contain two separate banks of

memory (bank a and bank b) for simultaneous READ

and WRITE operations.

The Flash memory devices are available in the fol-

lowing bank segmentation configuration:

• Bank a comprises one-eighth of the memory

and contains 8 x 4K-word parameter blocks;

the remainder of bank a is split into 7 x 32K-

word blocks.

• Bank b represents seven-eighths of the

memory, is equally sectored, and contains 48

x 32K-word blocks.

Figures 2 and 3 show the bottom and top memory

organizations.

DEVICE MARKING

Due to the size of the package, Micron’s standard

part number is not printed on the top of each device.

Instead, an abbreviated device mark comprised of a

five-digit alphanumeric code is used. The abbreviated

device marks are cross referenced to Micron part num-

bers in Table 1.

Table 1

Cross Reference for Abbreviated Device Marks

PART NUMBER

MT28F321P20FG-70 BET

MT28F321P20FG-70 TET

MT28F321P20FG-80 BET

MT28F321P20FG-80 TET

MT28F321P18FG-90 BET

MT28F321P18FG-90 TET

PRODUCT

MARKING

FW818

FW819

FW810

FW811

FW820

FW821

SAMPLE

MARKING

FX818

FX819

FX810

FX811

FX820

FX821

MECHANICAL

SAMPLE MARKING

FY818

FY819

FY810

FY811

FY820

FY821

2 Meg x 16 Page Flash Memory

MT28F321P20_3.p65 – Rev. 3, Pub. 7/02

2

Micron Technology, Inc., reserves the right to change products or specifications without notice.

©2002, Micron Technology, Inc.

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