M5M51016RT-10VL Просмотр технического описания (PDF) - MITSUBISHI ELECTRIC
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M5M51016RT-10VL Datasheet PDF : 7 Pages
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9 9JulJ,u1l9,199797
MMIITTSSUUBBIISSHHII LLSSIIss
MM55MM5511001166BBTTPP,,RRTT--1100VVLL,,
--1100VVLLLL
11004488557766--BBIITT((6655553366--WWOORRDDBBYY1166--BBIITT))CCMMOOSSSSTTAATTIICCRRAAMM
DESCRIPTION
The M5M51016BTP, RT are a 1048576-bit CMOS static RAM
organized as 65536 word by 16-bit which are fabricated using high-
performance triple polysilicon CMOS technology. The use of resistive
load NMOS cells and CMOS periphery result in a high density and low
power static RAM.
They are low stand-by current and low operation current and ideal for
the battery back-up application.
The M5M51016BTP,RT are packaged in a 44-pin thin small outline
package which is a high reliability and high density surface mount device
(SMD). Two types of devices are available. M5M51016BTP(normal
lead bend type package), M5M51016BRT (reverse lead bend type
package). Using both types of devices, it becomes very easy to design
a printed circuit board.
FEATURES
Type name
M5M51016BTP,RT-10VL
Access time
(max)
100ns
Power supply current
Active
(max)
stand-by
(max)
60µA
(VCC = 3.6V)
M5M51016BTP,RT-10VLL 100ns
12mA
(1MHz)
12µA
(VCC = 3.6V)
0.3µA
(VCC = 3.0V,
typ)
Single +3.3V power supply
Low stand-by current 0.3µA (typ.)
Directly TTL compatible : All inputs and outputs
Easy memory expansion and power down by CS, BC1 & BC2
Data hold on +2V power supply
Three-state outputs : OR-tie capability
OE prevents data contention in the I/O bus
Common data I/O
Package
.............................. 44pin 400mil TSOP(II)
M5M51016BTP,RT
APPLICATION
Small capacity memory units
PIN CONFIGURATION (TOP VIEW)
NC 1
A12 2
A7 3
A6 4
A5 5
ADDRESS
INPUTS
A4
6
A3 7
A2 8
A1 9
A0 10
CHIP SELECT
INPUT
CS
11
(0V)GND 12
OUTPUT ENABLE
INPUT
OE
13
NC 14
DQ1 15
DQ2 16
DQ3 17
DATA
INPUTS/
DQ4 18
OUTPUTS DQ5 19
DQ6 20
DQ7 21
DQ8 22
44 NC
43 BC1
42 BC2
BYTE
CONTROL
INPUTS
41 A14
40 A15
39 A13
38 W
37 A8
ADDRESS
INPUTS
WRITE
CONTROL
INPUTS
36 A9
35 A11
ADDRESS
INPUTS
34 A10
33 GND(0V)
32 NC
31 DQ16
30 DQ15
29 DQ14
28 DQ13
27 DQ12
DATA
INPUTS/
OUTPUTS
26 DQ11
25 DQ10
24 DQ9
23 VCC(5V)
Outline 44P3W - H (400mil TSOP Normal Bend)
NC 44
BYTE
CONTROL
BC1
43
INPUTS BC2 42
A14 41
ADDRESS
INPUTS
A15
40
WRITE A13 39
CONTROL
INPUTS
W
38
A8 37
ADDRESS A9 36
INPUTS A11 35
A10 34
(0V)GND 33
NC 32
DQ16 31
DQ15 30
DATA
INPUTS/
OUTPUTS
DQ14 29
DQ13 28
DQ12 27
DQ11 26
DQ10 25
DQ9 24
(5V)VCC 23
1 NC
2 A12
3 A7
4 A6
5 A5
6 A4
7 A3
ADDRESS
INPUTS
8 A2
9 A1
10 A0
11
CS
CHIP SELECT
INPUT
12 GND(0V)
13
OUTPUT ENABLE
OE INPUT
14 NC
15 DQ1
16 DQ2
17 DQ3
18 DQ4
19 DQ5
20 DQ6
21 DQ7
22 DQ8
DATA
INPUTS/
OUTPUTS
Outline 44P3W - J (400mil TSOP Reverse Bend)
NC : NO CONNECTION
MITSUBISHI
ELECTRIC
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