DTC143EG-AE3-R(2009) Просмотр технического описания (PDF) - Unisonic Technologies

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производитель

DTC143EG-AE3-R
(Rev.:2009)

NPN DIGITAL TRANSISTOR (BUILT-IN RESISTORS)

Unisonic Technologies 

DTC143E

NPN SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATINGS(Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Supply Voltage

VCC

50

V

Input Voltage

VIN

-10 ~ +30

V

Output Current

IC

100

mA

Power Dissipation

PD

400

mW

Junction Temperature

TJ

150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ THERMAL DATA

PARAMETER

Junction to Ambient

Junction to Case

SOT-23

SOT-323

SOT-23

SOT-323

SYMBOL

θJA

θJC

RATINGS

294

310

138

148

„ ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

UNIT

°C/W

°C/W

°C/W

°C/W

PARAMETER

SYMBOL

Input Voltage

VIN(OFF)

VIN(ON)

Output Voltage

VOUT(ON)

Input Current

IIN

Output Current

IOUT(OFF)

DC Current Gain

hFE

Input Resistance

R1

R2

Resistance Ratio

R1

Transition Frequency

fT

Note: Transition frequency of the device

TEST CONDITIONS

VCC = 5V, IOUT =100μA

VOUT = 0.3V, IOUT = 20mA

IOUT/IIN = 10mA/0.5 mA

VIN = 5V

VCC = 50V , VIN = 0V

VOUT = 5V, IOUT = 10mA

VCE =10V, IE = -5mA ,f =100MHz (Note)

MIN TYP MAX UNIT

0.5 V

3

V

0.1 0.3 V

1.8 mA

0.5 μA

20

3.29 4.7 6.11 KΩ

0.8 1 1.2

250

MHz

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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