DTC143EL(2005) Просмотр технического описания (PDF) - Unisonic Technologies

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производитель

DTC143EL
(Rev.:2005)

NPN DIGITAL TRANSISTOR (BUILT-IN RESISTORS)

Unisonic Technologies 

DTC143E

NPN EPITAXIAL SILICON TRANSISTOR

ABSOLUATE MAXIUM RATINGS (Ta = 25℃)

PARAMETER

Supply Voltage

Input Voltage

Output Current

Power Dissipation

Junction Temperature

Storage Temperature

SYMBOL

VCC

VIN

IC

PD

TJ

TSTG

RATINGS

50

-10 ~ +30

100

200

150

-40 ~ +150

UNIT

V

V

mA

mW

℃

℃

ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified.)

PARAMETER

Input Voltage

SYMBOL

TEST CONDITIONS

VI(off) VCC= 5V, IO=100μA

VI(ON) VO= 0.3V, IO= 20mA

Output Voltage

VO(ON) IO/II= 10mA / 0.5 mA

Input Current

II

VI= 5V

Output Current

IO(off) VCC= 50V , VI=0V

DC Current Gain

GI VO= 5V, IO= 10mA

Input Resistance

R1

Resistance Ratio

R2/R1

Transition Frequency

fT

*Transition frequency of the device

VCE= 10 V, IE= -5mA, f=100MHz *

MIN TYP

3

0.1

20

3.29 4.7

0.8

1

250

MAX

0.5

0.3

1.8

0.5

6.11

1.2

UNIT

V

V

mA

μA

kΩ

MHz

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2

QW-R220-015.A

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