PMXB65ENE Просмотр технического описания (PDF) - Nexperia B.V. All rights reserved
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PMXB65ENE Datasheet PDF : 15 Pages
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Nexperia
PMXB65ENE
30 V, N-channel Trench MOSFET
16
ID
(A)
12
10 V
4.5 V
4.0 V
aaa-008889
3.5 V
10-3
ID
(A)
10-4
aaa-021517
8
min typ
max
3.0 V
10-5
4
2.5 V
Fig. 7.
VGS = 2.25 V
0
0
1
2
3
4
VDS (V)
Tj = 25 °C
Output characteristics: drain current as a
function of drain-source voltage; typical values
10-6
0
0.5
1.0
1.5
2.0
2.5
VGS (V)
Tj = 25 °C; VDS = 5 V
Fig. 8. Sub-threshold drain current as a function of
gate-source voltage
250
RDSon
(mΩ)
200
2.5 V
aaa-016523
3.0 V 3.3 V 3.5 V
2.25 V
3.8 V
250
RDSon
(mΩ)
200
aaa-008896
150
150
100
4.0 V
100
Tj = 150 °C
4.5 V
50
VGS = 10 V
50
Tj = 25 °C
0
0
4
8
12
16
ID (A)
Tj = 25 °C
Fig. 9. Drain-source on-state resistance as a function
of drain current; typical values
0
0
2
4
6
8
10
VGS (V)
ID = 3.2 A
Fig. 10. Drain-source on-state resistance as a function
of gate-source voltage; typical values
PMXB65ENE
Product data sheet
All information provided in this document is subject to legal disclaimers.
3 November 2016
© Nexperia B.V. 2017. All rights reserved
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