STTH806DTI(2003) Просмотр технического описания (PDF) - STMicroelectronics
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STTH806DTI Datasheet PDF : 5 Pages
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Fig. 1: Conduction losses versus average current.
P(W)
30
25
20
δ = 0.1
δ = 0.05
δ = 0.2
δ = 0.5
δ=1
15
10
T
5
IF(AV)(A)
δ=tp/T
tp
0
0
1
2
3
4
5
6
7
8
9
10
STTH806DTI
Fig. 2: Forward voltage drop versus forward
current.
IFM(A)
100
Tj=125°C
(maximum values)
Tj=125°C
(typical values)
10
Tj=25°C
(maximum values)
VFM(V)
1
0
1
2
3
4
5
6
7
8
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration.
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6
δ = 0.5
0.4 δ = 0.2
δ = 0.1
0.2
Single pulse
0.0
1E-3
1E-2
tp(s)
T
1E-1
δ=tp/T
tp
1E+0
Fig. 4: Peak reverse recovery current versus
dIF/dt (typical values).
IRM(A)
9
8
VR=400V
Tj=125°C
7
6
5
IF=IF(AV)
IF=0.5 x IF(AV)
IF=2 x IF(AV)
4
3
2
1
dIF/dt(A/µs)
0
0
50 100 150 200 250 300 350 400 450 500
Fig. 5: Reverse recovery time versus dIF/dt
(typical values).
trr(ns)
60
50
VR=400V
Tj=125°C
40
IF=2 x IF(AV)
IF=IF(AV)
IF=0.5 x IF(AV)
30
20
10
0
0
dIF/dt(A/µs)
50 100 150 200 250 300 350 400 450 500
Fig. 6: Reverse charges versus dIF/dt (typical
values).
Qrr(nC)
140
120
VR=400V
Tj=125°C
IF=2 x IF(AV)
100
80
60
IF=IF(AV)
IF=0.5 x IF(AV)
40
20
dIF/dt(A/µs)
0
0
100
200
300
400
500
3/5
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