SLD333V Просмотр технического описания (PDF) - Sony Semiconductor

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производитель

SLD333V

1W High Power Laser Diode

Sony Semiconductor 

SLD333V

Electrical and Optical Characteristics (Tc = 25°C)

Item

Threshold current

Operating current

Operating voltage

Wavelength

Radiation

angle

Parallel

Perpendicular

Positional

accuracy

Angle

Position

Differential efficiency

Monitor current

Symbol

Ith

Iop

Vop

λp

θ//

θ⊥

∆φ//

∆φ⊥

∆X, ∆Y

ηD

Imon

Conditions

Po = 1.0W

Po = 1.0W

Po = 1.0W

Po = 1.0W

Po = 1.0W

Po = 1.0W

Po = 1.0W

Tc: Case temperature

Min. Typ. Max.

—

0.2 0.5

—

1.2 1.5

—

2.0 3.0

790

—

840

4

9

15

27

32

40

—

—

±5

—

—

±3

—

—

±50

0.5 0.9

—

0.3 1.5

6

Unit

A

A

V

nm

degree

degree

degree

degree

µm

W/A

mA

–2–

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