E13009 Просмотр технического описания (PDF) - Shantou Huashan Electronic Devices

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производитель

E13009

NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices 

Shantou Huashan Electronic Devices Co.,Ltd.

NPN SILICON TRANSISTOR

HE13009

█ HIGH VOLTAGE SWITCH MODE APPLICICATIONS

High Speed Switching

Suitable for Switching Regulator and Montor Control

█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）

Tstg——Storage Temperature………………………… -55~150℃

Tj——Junction Temperature……………………………… 150℃

PC——Collector Dissipation（Tc=25℃）…………………… 100W

VCBO——Collector-Base Voltage…………………………… 700V

VCEO——Collector-Emitter Voltage………………………… 400V

VEBO——Emitter-Base Voltage……………………………… 9V

IC——Collector Current（DC）……………………………… 12A

IB——Base Current……………………………………………6A

TO-220

1―Base，B

2―Collector，C

3―Emitter, E

█ ELECTRICAL CHARACTERISTICS（Ta=25℃）

Symbol

BVCEO

IEBO

HFE（1）

HFE（2）

VCE(sat)1

VCE(sat)2

VCE(sat)3

VBE(sat)1

VBE(sat)2

Cob

fT

tON

tSTG

tF

Characteristics

Collector-Emitter Breakdown Voltage

Emitter-Base Cut-off Current

DC Current Gain

Collector- Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Output Capacitance

Current Gain-Bandwidth Product

Turn On Time

Storage Time

Fall Time

Min Typ Max Unit

Test Conditions

400

V IC=10mA, IB=0

1 mA VEB=9V, IC=0

8

40

VCE=5V, IC=5A

6

30

VCE=5V, IC=8A

1

V IC=5A, IB=1A

1.5 V IC=8A, IB=1.6A

3 V IC=12A, IB=3A

1.2 V IC=5A, IB=1A

1.6 V IC=8A, IB=1.6A

180

pF VCB=10V,f=0.1MHz

4

MHz VCE=10V,IC=0.5A

1.1 μs

3 μs VCC=125V, IC=8A,

0.7 μs IB1=1.6A,IB2=-1.6A

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