SF51G(Rev2019A0) Просмотр технического описания (PDF) - Jiangsu Yutai Electronics Co., Ltd
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SF51G Datasheet PDF : 2 Pages
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SF51G THRU SF58G
Reverse Voltage - 50 to 600 Volts Forward Current - 5.0 Ampere
SUPER FAST GLASS PASSIVATED RECTIFIER
Features
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Idea for printed circuit board
Super fast switching for high efficiency
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
250℃/ 10 seconds at terminals
DO-201AD
0.220(5.6)
0.197(5.0)
DIA.
1.0 (25.4)
MIN.
0.375(9.5)
0.285(7.2)
Mechanical Data
Case : JEDEC DO-201AD Molded plastic body
Terminals : Solder plated, solderable per MIL-STD-750,Method 2026
Polarity : Polarity symbol marking on body
Mounting Position : Any
Weight : 0.04 ounce, 1.10 grams
0.052(1.3)
0.048(1.2)
DIA.
1.0 (25.4)
MIN.
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
Ratings at 25°C ambient temperature unlss otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Parameter
Marking Code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at TA=55℃
Peak forward surge current
8.3ms single half sine-wave
superimposed onrated load (JEDEC Method)
Maximum instantaneous forward voltage at 5.0A
Maximum DC reverse current TA=25℃
at rated DC blocking voltage
TA=100℃
Maximum reverse recovery time (NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
SYMBOLS
VRMM
VRMS
VDC
SF51G
MDD
SF51G
50
35
50
SF52G
MDD
SF52G
100
70
100
SF53G
MDD
SF53G
150
105
150
SF54G
MDD
SF54G
200
140
200
SF55G
MDD
SF55G
300
210
300
SF56G
MDD
SF56G
400
280
400
SF58G
MDD
SF58G
600
420
600
I(AV)
5.0
IFSM
VF
IR
trr
CJ
RθJA
TJ,TSTG
150.0
0.95
1.25
1.7
10.0
50.0
35
100.0
50.0
30.0
-65 to +150
UNITS
V
V
V
A
A
V
μA
ns
pF
℃/W
℃
Note: 1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A
2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3. Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted
DN:T19828A0
https://www.microdiode.com
Rev:2019A0
Page :1
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