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SD1538-08 Просмотр технического описания (PDF) - STMicroelectronics

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SD1538-08 Datasheet PDF : 5 Pages
1 2 3 4 5
SD1538-08
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
. DESIGNED FOR HIGH POWER PULSE
IFF, DME, AND TACAN APPLICATIONS
. 200 W (typ.) IFF 1030 - 1090 MHz
. 150 W (min.) DME 1025 - 1150 MHz
. 140 W (typ.) TACAN 960 - 1215 MHz
. 7.8 dB MIN. GAIN
. REFRACTORY GOLD METALLIZATION
. BALLASTING AND LOW THERMAL
RESISTANCE FOR RELIABILITY AND
RUGGEDNESS
. 30:1 LOAD VSWR CAPABILITY AT
SPECIFIED OPERATING CONDITIONS
. INPUT AND OUTPUT MATCHED,
COMMON BASE CONFIGURATION
.400 x .400 2LFL (M138)
hermetically sealed
ORDER CODE
B RA ND IN G
SD1538-08
1538-8
PIN CONNECTION
DESCRIPTION
The SD1538-08 is a gold metallized, silicon NPN
power transistor. The SD1538-08 is designed for
applications requiring high peak power and low
duty cycles such as IFF, DME and TACAN. The
SD1538-08 is packaged in a metal/ceramic pack-
age with internal input/output matching, resulting
in improved broadband performance and low ther-
mal resistance.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symb ol
Parameter
VCBO
VCES
VEBO
IC
PDISS
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance
September 6, 1994
1. Collector
2. Base
3. Emitter
4. Base
Value
Unit
65
V
65
V
3.5
V
11
A
583
W
+200
°C
65 to +150
°C
0.30
°C/W
1/5

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