RMLA3565-53 Просмотр технического описания (PDF) - Raytheon Company
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RMLA3565-53 Datasheet PDF : 5 Pages
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RMLA3565-53
Wideband Low Noise MMIC Amplifier
Description
Features
Performance
Characteristics
Absolute
Maximum
Ratings
The Raytheon RMLA3565-53 is a single bias wideband low noise MMIC amplifier
that meets the following specifications over the 3.5 - 6.5 GHz frequency range.
The MMIC requires no external matching circuits and no external gate bias
supply. To provide low noise, high linearity, and low current this device uses
Raytheon’s advanced 0.25 µm PHEMT process.
T 18.0 dB Gain
T 1.35 dB Noise Figure
T Single Positive Bias
T Small Outline Quad Package
Parameter
Frequency Range
Gain (Small Signal)
Gain Variation vs Temp
Noise Figure
Input/Output Return Loss
Power Out, P-1dB
IP3 @ 5.5GHz,-8dBm Out
Idd
Vdd
Case Operating Temp
Thermal Resistance
Min
3.5
17.0
8.0
-35
Typ
18.0
-0.013
1.35
-10.0
9.0
21.0
70.0
4.0
77.5
Notes:
Operated at 25 °C and Vdd=4.0V.
25 °C does not apply to ”Case Operating Temperature”.
Max
6.5
1.9
-5.0
90.0
6.0
+95
Unit
GHz
dB
dB/°C
dB
dB
dBm
dBm
mA
V
°C
°C/W
Parameter
Positive Drain DC Voltage
RF Input Power (from 50Ω source)
Drain Current
Channel Temperature
Operating Case Temperature
Storage Temperature Range
Soldering Temperature
Symbol
Vdd
PIN(CW)
Idd
Tch
TCase
TStorage
Tsolder
Value
6.5
0
110
175
-40 to 100
-40 to 110
220
Unit
V
dBm
mA
°C
°C
°C
°C
Characteristic performance data and specifications are subject to change without notice.
Tel: 978-470-9715
FAX: 978-470-9452
www.raytheon.com/micro
Revised July 30, 1999
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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