MCR12N Просмотр технического описания (PDF) - Kersemi Electronic Co., Ltd.

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производитель

MCR12N

Silicon Controlled Rectifiers

Kersemi Electronic Co., Ltd. 

MCR12D, MCR12M, MCR12N

THERMAL CHARACTERISTICS

Characteristic

Symbol

Thermal Resistance — Junction to Case

— Junction to Ambient

Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

RθJC

RθJA

TL

Min

OFF CHARACTERISTICS

Peak Repetitive Forward or Reverse Blocking Current

IDRM,

(VD = Rated VDRM and VRRM; Gate Open)

TJ = 25°C

IRRM

—

TJ = 125°C

—

ON CHARACTERISTICS

Peak Forward On–State Voltage* (ITM = 24 A)

Gate Trigger Current (Continuous dc) (VD = 12 V; RL = 100 Ω)

Holding Current (VD = 12 V, Gate Open, Initiating Current = 200 mA)

Latch Current (VD = 12 V, IG = 20 mA)

Gate Trigger Voltage (Continuous dc) (VD = 12 V; RL =100 Ω)

DYNAMIC CHARACTERISTICS

VTM

—

IGT

2.0

IH

4.0

IL

6.0

VGT

0.5

Critical Rate of Rise of Off–State Voltage

(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)

Repetitive Critical Rate of Rise of On–State Current

IPK = 50 A, Pw = 40 µsec, diG/dt = 1 A/µsec, Igt = 50 mA

v v *Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.

dv/dt

100

di/dt

—

Value

2.2

62.5

260

Unit

°C/W

°C

Typ

Max

Unit

mA

—

0.01

—

2.0

—

2.2

Volts

8.0

20

mA

20

40

mA

25

60

mA

0.65

1.0

Volts

250

—

V/µs

—

50

A/µs

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