MBR545G-SMB-R Просмотр технического описания (PDF) - Unisonic Technologies
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MBR545G-SMB-R Datasheet PDF : 3 Pages
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MBR545
Preliminary
DIODE
ABSOLUTE MAXIMUM RATINGS
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
PARAMETER
SYMBOL
RATINGS
UNIT
DC Blocking Voltage
VDC
45
V
RMS Voltage
Recurrent Peak Reverse Voltage
VRMS
31.5
V
VRRM
45
V
Average Rectified Output Current
IO
5.0
A
Non-Repetitive Peak Forward Surge Current: 8.3ms Single
Half Sine-Wave Superimposed on Rated Load
IFSM
150
A
Operating Junction Temperature
TJ
-65~+150
°C
Storage Temperature
TSTG
-65~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL RESISTANCES CHARACTERISTICS
PARAMETER
Junction to Ambient (Note 1)
ELECTRICAL CHARACTERISTICS
SYMBOL
θJA
RATINGS
50
UNIT
°C/W
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
PARAMETER
SYMBOL
TEST CONDITIONS
Forward Voltage Drop (Note 2)
VF
IF=5.0A
Peak Reverse Current
at Rated DC Blocking Voltage
IR
TJ=25°C
TJ=100°C
Notes: 1. Minimum Pad Area.
2. Pulse test: 300μs pulse width, 1% duty cycle.
MIN TYP MAX UNIT
0.70 V
0.05 mA
10 mA
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R601-229.b
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