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MBR545DS Просмотр технического описания (PDF) - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

Номер в каталоге
Компоненты Описание
производитель
MBR545DS
YFWDIODE
DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD YFWDIODE
MBR545DS Datasheet PDF : 3 Pages
1 2 3
MBR540DS THRU MBR5200DS TO-252
Surface Mount Schottky Barrier Rectifier
Reverse Voltage - 40 to 200 V
Forward Current - 5 A
FEATURES
High current capability
Low forward voltage drop
High surge capability
High temperature soldering guaranteed
Mounting position: any
Lead free in comply with EU RoHS 2011/65/EU directives
MECHANICAL DATA
Case: TO-252(D-PAK)
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.32g / 0.011oz
TO-252(D-PAK)
Maximum Ratings and Electrical characteristics
Ratings at 25 ° ambient temperature unless otherwise specified.
Parameter
Symbols MBR540DS MBR545DS MBR560DS MBR5100DS MBR5150DS MBR5200DS Units
Maximum Repetitive Peak Reverse Voltage
VRRM
40
45
60
100
150
200
V
Maximum RMS voltage
VRMS
28
31.5
42
70
105
140
V
Maximum DC Blocking Voltage
VDC
40
45
60
100
150
200
V
Maximum Average Forward Rectified Current
IF(AV)
Peak Forward Surge Current, 8.3ms Single Half Sine-
wave Superimposed On Rated Load (JEDEC method)
IFSM
Maximum Instantaneous Forward Voltage at 5 A
VF
Maximum Instantaneous Reverse Current TA = 25°C
at Rated DC Reverse Voltage
TA = 100°C
IR
Typical Junction Capacitance1
Cj
0.65
0.1
20
600
5.0
120
0.70
0.85
0.90
0.05
20
400
A
A
0.92
V
mA
pF
Typical Thermal Resistance 2
RθJA
35
°C/W
Operating Junction Temperature Range
Tj
-55 ~ +150
-55 ~ +175
°C
Storage Temperature Range
Tstg
1Measured at 1 MHz and applied reverse voltage of 4 V D.C
2P.C.B. mounted with 10cm X 10cmX1mm copper pad areas.
-55 ~ +150
-55 ~ +175
°C
www.yfwdiode.com
1/3
Dongguan YFW Electronics Co, Ltd.

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