IXSN55N120A Просмотр технического описания (PDF) - IXYS CORPORATION
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Компоненты Описание
производитель
IXSN55N120A Datasheet PDF : 2 Pages
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IXSN55N120A
Symbol
gfs
IC(on)
Cies
Coes
C
res
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
t
d(on)
t
ri
t
d(off)
tsi
tc
E(on)
E
off
R
thJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
IC = IC90; VCE = 10 V
32 45
S
Pulse test, t £ 300 ms, duty cycle d £ 2 %
VCE = 10 V, VGE = 15 V
VCE = 25 V, VGE = 0 V, f = 1 MHz
340
A
8000
pF
590
pF
120
pF
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
300
nC
80
nC
140
nC
Inductive
load,
T
J
=
25°C
IC = IC90, VGE = 15 V, VCE = 0.8 VCES, RG = 2.7 W
Remarks: Switching times may increase for VCE
(Clamp) > 0.8 VCES, higher TJ or increased RG
140
ns
220
ns
400
ns
700 1000 ns
18
mJ
140
ns
Inductive load, TJ = 125°C
250
ns
IC = IC90, VGE = 15 V, VCE = 0.8 VCES, RG = 2.7 W
600
ns
Remarks: Switching times may increase for VCE
900
ns
(Clamp) > 0.8 V , higher T or increased R
CES
J
G
950
ns
6
mJ
25
mJ
0.25 K/W
0.05
K/W
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
Millimeter
Min. Max.
31.50 31.88
7.80 8.20
4.09 4.29
4.09 4.29
4.09 4.29
14.91 15.11
30.12 30.30
38.00 38.23
11.68 12.22
8.92 9.60
0.76 0.84
12.60 12.85
25.15 25.42
1.98 2.13
4.95 5.97
26.54 26.90
3.94 4.42
4.72 4.85
24.59 25.07
-0.05 0.1
Inches
Min. Max.
1.240 1.255
0.307 0.323
0.161 0.169
0.161 0.169
0.161 0.169
0.587 0.595
1.186 1.193
1.496 1.505
0.460 0.481
0.351 0.378
0.030 0.033
0.496 0.506
0.990 1.001
0.078 0.084
0.195 0.235
1.045 1.059
0.155 0.174
0.186 0.191
0.968 0.987
-0.002 0.004
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-2
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