IXGP20N100 Просмотр технического описания (PDF) - IXYS CORPORATION
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производитель
IXGP20N100 Datasheet PDF : 2 Pages
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Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
gfs
IC = IC90; VCE = 10 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies
Coes
VCE = 25 V, VGE = 0 V, f = 1 MHz
Cres
IC(ON)
VGE = 10V, VCE = 10V
Qg
Qge
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Qgc
td(on)
Inductive load, TJ = 25°C
tri
IC = IC90, VGE = 15 V
td(off)
VCE = 800 V, RG = Roff = 47 Ω
tfi
Eoff
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 VCES,
higher TJ or increased RG
td(on)
tri
Eon
td(off)
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
VCE = 800 V, RG = Roff = 47 Ω
Remarks: Switching times may
tfi
increase for VCE (Clamp) > 0.8 VCES,
Eoff
higher TJ or increased RG
RthJC
RthCK
TO-220
Characteristic Values
Min. Typ. Max.
12 16
S
1750
pF
100
pF
38
pF
90
A
73
nC
13
nC
26
nC
30
ns
30
ns
350 700 ns
280 700 ns
3.5 8.0 mJ
30
ns
30
ns
0.65
mJ
700
ns
520
ns
6.5
mJ
0.83 K/W
0.5
K/W
IXGA 20N100
IXGP 20N100
TO-220 AB Dimensions
Pins: 1 - Gate
3 - Emitter
2 - Collector
4 - Collector
Bottom Side
TO-263 AA Outline
1. Gate
2. Collector
3. Emitter
4. Collector
Bottom Side
Min. Recommended Footprint
(Dimensions in inches and mm)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Millimeter
Min. Max.
4.06 4.83
2.03 2.79
0.51 0.99
1.14 1.40
0.46 0.74
1.14 1.40
8.64 9.65
7.11 8.13
9.65 10.29
6.86 8.13
2.54 BSC
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
0.46 0.74
Inches
Min. Max.
.160 .190
.080 .110
.020 .039
.045 .055
.018 .029
.045 .055
.340 .380
.280 .320
.380 .405
.270 .320
.100 BSC
.575 .625
.090 .110
.040 .055
.050 .070
0 .015
.018 .029
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
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