IRF130 Просмотр технического описания (PDF) - Intersil
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IRF130 Datasheet PDF : 7 Pages
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IRF130
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Continuous Source to Drain Current
ISD
Modified MOSFET
D
Pulse Source to Drain Current (Note 3)
ISDM
Symbol Showing the
Integral Reverse P-N
Junction Diode
G
MIN
TYP
MAX UNITS
-
-
14
A
-
-
56
A
S
Source to Drain Diode Voltage (Note 2)
VSD
TJ = 25oC, ISD = 14A, VGS = 0V (Figure 13)
-
-
2.5
V
Reverse Recovery Time
trr
TJ = 25oC, ISD = 14A, dISD/dt = 100A/µs
55
120
250
ns
Reverse Recovery Charge
QRR
TJ = 25oC, ISD = 5.5A, dISD/dt = 100A/µs
0.26
0.58
1.3
µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: Pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 380µH, RG = 25Ω, peak IAS = 14A. See Figures 15, 16.
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100 125 150 175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
15
12
9
6
3
0
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10
1.0
0.5
0.2
0.1
0.1
0.05
0.02
0.01
10-2
10-5
SINGLE PULSE
10-4
PDM
10-3
10-2
0.1
t1, RECTANGULAR PULSE DURATION (s)
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
t1
NOTES:
t2
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
1
10
3
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