IRF7469TRPBF Просмотр технического описания (PDF) - VBsemi Electronics Co.,Ltd
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IRF7469TRPBF Datasheet PDF : 9 Pages
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IRF7469TRPBF
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
0.030
0.025
www.VBsemi.tw
ID = 12.4 A
TJ = 150 °C
10
0.020
0.015
125 °C
TJ = 25 °C
0.010
0.005
25 °C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
2.4
ID = 250 µA
2.2
2.0
1.8
0.000
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
1.6
20
1.4
10
1.2
1.0
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0
0.001 0.01
0.1
1
10
100 600
Time (s)
Single Pulse Power (Junction-to-Ambient)
100
Limited by RDS(on)*
100 µs
10
1 ms
1
10 ms
100 ms
0.1
1s
10 s
0.01
0.1
TA = 25 °C
Single Pulse
1
BVDSS
Limited
10
DC
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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