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IRF7469TRPBF Просмотр технического описания (PDF) - VBsemi Electronics Co.,Ltd

Номер в каталоге
Компоненты Описание
производитель
IRF7469TRPBF
VBSEMI
VBsemi Electronics Co.,Ltd VBSEMI
IRF7469TRPBF Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
IRF7469TRPBF
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
10
VGS = 10 V thru 5 V
40
8
www.VBsemi.tw
30
20
10
0
0
0.024
4V
3V
0.4
0.8
1.2
1.6
2.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.019
0.014
0.009
VGS = 4.5 V
VGS = 10 V
0.004
0
10
20
30
40
50
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
VDS = 20 V
8
ID = 12.4 A
6
4
2
0
0
5
10 15 20 25 30 35
Qg - Total Gate Charge (nC)
Gate Charge
6
TC = 25 °C
4
2
TC = 125 °C
0
TC = - 55 °C
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
2400
2000
Ciss
1600
1200
800
Coss
400
Crss
0
0 5 10 15 20 25 30 35 40
VDS - Drain-to-Source Voltage (V)
Capacitance
1.8
1.6
VGS = 10 V
ID = 12.4 A
1.4
1.2
1.0
0.8
0.6
- 50 - 25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
E-mail:China@VBsemi TEL:86-755-83251052
3

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