DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

GL4910 Просмотр технического описания (PDF) - Sharp Electronics

Номер в каталоге
Компоненты Описание
производитель
GL4910 Datasheet PDF : 4 Pages
1 2 3 4
GL4910
s Features
1. Small spot light diameter for easy beam diaphragming
(*Apparent emission diameter : TYP. φ 0.32 mm)
2. Uniform emission intensity on chip emitting surface
3. Low peak forward voltage type
(Peak forward voltage V FM: TYP. 1.7V)
* Expansion range on lens surface of infrared emitted from chips
s Applications
1. Cameras
GL4910
Side View Type Infrared Emitting
Diode for Camera AF
(Automatic Focusing)
s Outline Dimensions
(Unit : mm)
4.0 ± 0.2
2.0 ± 0.2
0.8
0.8
1.5
0.5
Chip center
Pink
R1.75± 0.1 8˚
8˚ transparent
epoxy resin
1
2
-
0.45
+
-
0.2
0.1
1
2- 0.28
2- 0.77
2
2.54
8˚
8˚
(Chip position 8˚
: 2.65)
8˚
2
-
0.4 +-
0.2
0.1
2
1 Cathode
2 Anode
8˚
8˚
* ( ) : Reference dimensions
* Tolerance : ± 0.15 mm
s Absolute Maximum Ratings
(Ta=25˚C)
Parameter
Forward current
*1Peak forward current
Reverse voltage
Operating temperature
Storage temperature
*2Soldering temperature
Symbol Rating Unit
IF
50
mA
I FM
1
A
VR
4
V
Topr - 25 to + 60 ˚C
Tstg - 40 to + 85 ˚C
Tsol
260
˚C
*1 30,00 cycles max. on pulse conditions shown in the right drawing
*2 For 5 seconds at the position of 2.15 mm from the resin edge
120 µ s
IFM
500 µ s
32ms (64 pulses)
1s (1 cycle)
Soldering area
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]