FQP6N80 Просмотр технического описания (PDF) - Fairchild Semiconductor
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FQP6N80 Datasheet PDF : 8 Pages
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Typical Characteristics
V
GS
Top : 15.0 V
101
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
100
10-1
10-1
※ Notes :
1. 250μs Pulse Test
2. T = 25℃
C
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
4
V = 10V
GS
3
VGS = 20V
2
1
※ Note : T = 25℃
J
0
0
4
8
12
16
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
2000
1800
1600
1400
1200
1000
800
600
400
200
0
10-1
C = C + C (C = shorted)
iss
gs
gd ds
C =C +C
oss
ds
gd
C =C
rss
gd
C
iss
C
oss
C
rss
※ Notes :
1. V = 0 V
GS
2. f = 1 MHz
100
101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
101
150oC
25oC
100
-55oC
10-1
2
※ Notes :
1. VDS = 50V
2. 250μs Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150℃
25℃
※ Notes :
1. V = 0V
GS
2. 250μs Pulse Test
0.4
0.6
0.8
1.0
1.2
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V = 160V
DS
10
VDS = 400V
8
V = 640V
DS
6
4
2
※ Note : ID = 5.8A
0
0
5
10
15
20
25
30
35
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, September 2000
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