BCX5616Q Просмотр технического описания (PDF) - Diodes Incorporated.
Номер в каталоге
Компоненты Описание
производитель
BCX5616Q Datasheet PDF : 7 Pages
| |||
Absolute Maximum Ratings (@ TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
Continuous Base Current
Peak Pulse Base Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
Value
100
80
6
1
2.0
100
200
BCX5616Q
Unit
V
V
V
A
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Power Dissipation
Characteristic
Thermal Resistance, Junction to Ambient Air
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Note 6)
(Note 7)
(Note 8)
(Note 6)
(Note 7)
(Note 8)
(Note 9)
Symbol
PD
RθJA
RθJL
TJ, TSTG
Value
1
1.5
2.0
125
83
60
13
-65 to +150
Unit
W
°C/W
°C/W
°C
ESD Ratings (Note 10)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit JEDEC Class
V
3A
V
C
Notes:
6. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
under still air conditions whilst operating in a steady-state.
7. Same as note (6), except the device is mounted on 25mm x 25mm 1oz copper.
8. Same as note (6), except the device is mounted on 50mm x 50mm 1oz copper.
9. Thermal resistance from junction to solder-point (on the exposed collector pad).
10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
BCX5616Q
Datasheet Number: DS37024 Rev. 2 – 2
2 of 7
www.diodes.com
May 2015
© Diodes Incorporated
Share Link: 