BUK9K18-40E Просмотр технического описания (PDF) - Nexperia B.V. All rights reserved
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BUK9K18-40E Datasheet PDF : 13 Pages
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Nexperia
40
RDSon
3
(mΩ)
30
20
10
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3.5
4.5
VGS(V) = 10
BUK9K18-40E
Dual N-channel 40 V, 19.5 mΩ logic level MOSFET
2.4
a
1.6
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0.8
0
0
10
20
30 ID(A) 40
Tj = 25 °C; tp = 300 μs
Fig. 12. Drain-source on-state resistance as a function
of drain current; typical values
0
-60
0
60
120
180
Tj (°C)
Fig. 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
VDS
ID
VGS(pl)
VGS(th)
VGS
QGS1
QGS2
QGS
QGD
QG(tot)
003aaa508
Fig. 14. Gate charge waveform definitions
10
VGS
(V)
7.5
5
VDS= 32V
14 V
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2.5
0
0
5
10 QG (nC) 15
Fig. 15. Gate-source voltage as a function of gate
charge; typical values
BUK9K18-40E
Product data sheet
All information provided in this document is subject to legal disclaimers.
16 March 2016
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