BUK9K18-40E Просмотр технического описания (PDF) - Nexperia B.V. All rights reserved
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BUK9K18-40E Datasheet PDF : 13 Pages
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Nexperia
BUK9K18-40E
Dual N-channel 40 V, 19.5 mΩ logic level MOSFET
Symbol
Parameter
Conditions
VGS = 10 V; ID = 10 A; Tj = 25 °C;
Fig. 12
Dynamic characteristics FET1 and FET2
QG(tot)
total gate charge
ID = 10 A; VDS = 32 V; VGS = 10 V;
Tj = 25 °C; Fig. 14; Fig. 15
QGS
gate-source charge
ID = 10 A; VDS = 32 V; VGS = 10 V;
QGD
gate-drain charge
Tj = 25 °C; Fig. 14
Ciss
input capacitance
VDS = 25 V; VGS = 0 V; f = 1 MHz;
Coss
output capacitance
Tj = 25 °C; Fig. 16
Crss
reverse transfer
capacitance
td(on)
tr
turn-on delay time
rise time
VDS = 32 V; RL = 3.3 Ω; VGS = 10 V;
RG(ext) = 5 Ω; Tj = 25 °C
td(off)
turn-off delay time
tf
fall time
Source-drain diode FET1 and FET2
VSD
source-drain voltage IS = 10 A; VGS = 0 V; Tj = 25 °C; Fig. 17
trr
reverse recovery time IS = 10 A; dIS/dt = -100 A/µs; VGS = 0 V;
Qr
recovered charge
VDS = 20 V; Tj = 25 °C
40
003aaj631
90
gfs
(S)
RDSon
(mΩ)
30
60
20
30
10
Min Typ Max Unit
-
13.5 16
mΩ
-
14.5 -
nC
-
2
-
nC
-
3
-
nC
-
796 1061 pF
-
137 164 pF
-
82
112 pF
-
4
-
ns
-
4.6 -
ns
-
17.5 -
ns
-
9.9 -
ns
-
0.78 1.2 V
-
8.3 -
ns
-
16.2 -
nC
003aaj630
0
0
10
20
30 ID (A) 40
Fig. 6. Forward transconductance as a function of
drain current; typical values
0
0
2.5
5
7.5 VGS(V) 10
Fig. 7. Drain-source on-state resistance as a function
of gate-source voltage; typical values
BUK9K18-40E
Product data sheet
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16 March 2016
© Nexperia B.V. 2017. All rights reserved
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