NCV8851-1DBR2G Просмотр технического описания (PDF) - ON Semiconductor
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NCV8851-1DBR2G Datasheet PDF : 18 Pages
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NCV8851−1
ATTRIBUTES
Characteristic
ESD Capability
Human Body Model (Boost, VIN_CS)
Human Body Model (All Others)
Machine Model
Charge Device Model
Package Thermal Resistance
Junction–to–Ambient, RqJA (Note 1)
Junction–to–Ambient, RqJA (Note 2)
1. 50 mm2, 1.0 oz copper on FR4 board.
2. 500 mm2, 1.0 oz copper on FR4 board.
ELECTRICAL CHARACTERISTICS
(−40°C < TJ < 150°C, 4.5 V < VIN < 40 V, 4.5 V < BST < 46 V, ROSC = 51.1 kW, unless otherwise specified)
Characteristic
Conditions
Min
Typ
GENERAL
Quiescent Current
(IVIN + IVIN_CS + IBST)
VIN = 13.2 V, EN = 0 V, Sleep Mode
−40°C < TA < 125°C
VIN = 13.2 V, VFB = 1 V
EN = 5 V, No Switching
−
−
−
2.0
VIN = 13.2 V, VFB = 0 V
EN = 5 V, Switching
−
3.2
LDO Current
VIN = 13.2 V, VFB = 0 V, EN = 5 V
Switching, 3.3 nF on GH and GL
−
10
Thermal Shutdown
Guaranteed by Design
150
180
Thermal Shutdown Hysteresis
Guaranteed by Design
−
10
Undervoltage Lockout (VIN_IC)
Undervoltage Lockout Hysteresis
VIN_IC increasing
4.1
4.3
50
125
SWITCHING REGULATOR
Reference Voltage
0.784
0.8
Minimum GH Off Time
110
180
Minimum GH Pulse Width
Static Operating
−
140
OSCILLATOR
Switching Frequency
Ramp Voltage Amplitude
ROSC = 51.1 kW
ROSC = 23.2 kW
ROSC = 16.2 kW
153
170
306
360
425
500
0.9
1.1
VOLTAGE ERROR AMPLIFIER
DC Gain
Guaranteed by Design
70
73
Gain−Bandwidth Product
Guaranteed by Design
8.0
10
Charge Currents
FB Bias Current
Source, VCOMP = 0 V
Sink, VCOMP = 1.75 V
Guaranteed by Design
2
4
1.3
3
−
0.1
CURRENT SENSE AMPLIFIER
Common−Mode Range
0
−
Amplifier Gain
0 ≤ (CSP−CSN) ≤ 100 mV
0 V ≤ CSN ≤ 10.0 V
−
1
Value
≥ 1.0 kV
≥ 1.5 kV
≥ 200 V
≥ 1.0 kV
156°C/W
108°C/W
Max
1
3.0
5.0
20
210
20
4.5
200
0.816
250
200
187
414
575
1.3
−
−
−
−
1.0
10.0
−
Unit
mA
mA
mA
mA
°C
°C
V
mV
V
ns
ns
kHz
kHz
kHz
V
dB
MHz
mA
mA
mA
V
V/V
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