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Номер в каталоге
Компоненты Описание
F2213 Просмотр технического описания (PDF) - Polyfet RF Devices
Номер в каталоге
Компоненты Описание
производитель
F2213
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Polyfet RF Devices
F2213 Datasheet PDF : 2 Pages
1
2
POUT VS PIN GRAPH
F2213
100
10
CAPACITANCE VS VOLTAGE
F2C 4 DIE CAPACITANCE
Ciss
Coss
Crss
IV CURVE
9
8
7
6
5
4
3
2
1
0
0
2
Vg = 2V
4
Vg = 4V
F2C 4 DIE IV CURVE
6
8
10
Vds in Volts
Vg = 6V
Vg = 8V
12
14
16
Vg = 10V
Vg = 12V
1
0
5
10
15
20
25
30
VDS IN VOLTS
ID AND GM VS VGS
F2C 4 DIE GM & ID vs VGS
10
Id
1
Gm
0.1
0.01
0
2
4
6
8
10
12
14
Vgs in Volts
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
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